D1202 fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* USEFUL PO AT 1GHz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAI.
* LOW Crss
* USEFUL PO AT 1GHz
DP
PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN
DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18..
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